| PART |
Description |
Maker |
| M45PE20 M45PE20-VMN6 M45PE20-VMN6G M45PE20-VMN6P M |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
From old datasheet system
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| M25PE2007 M25PE20-VMN6G M25PE20-VMN6P M25PE20-VMN6 |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| LXT971ABE M25P64-VME6P M25P64-VMF6P M27C400206 M27 |
Series One Watt Zeners
64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
64 Mbit (4Mbx16, Boot Block) 3V Supply Flash memory
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
Serial access Real-Time Clock with alarm
|
1N4728A
STMICROELECTRONICS[STMicroelectronics]
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| IS41LV8205-50J IS41LV8205-50JI IS41LV8205-60JI IS4 |
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W108AB M36W108AB100ZM1T M36W108AB100ZM5T M36W10 |
8 MBIT (1MB X8, BOOT BLOCK) FLASH MEMORY AND 1 MBIT (128KB X8) SRAM LOW VOLTAGE MULTI-MEMORY PRODUCT
8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Memory
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
From old datasheet system
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
